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Part II: Design of Well Doping Profile for Improved Breakdown and Mixed-Signal Performance of STI-Type DePMOS Device

Tailor, Ketankumar H and Shrivastava, Mayank and Gossner, Harald and Baghini, Maryam Shojaei and Rao, Valipe Ramgopal (2015) Part II: Design of Well Doping Profile for Improved Breakdown and Mixed-Signal Performance of STI-Type DePMOS Device. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 62 (12). pp. 4105-4113.

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Official URL: http://dx.doi.org/10.1109/TED.2015.2488683

Abstract

Shallow-trench isolation drain extended pMOS (STI-DePMOS) devices show a distinct two-stage breakdown. The impact of p-well and deep-n-well doping profile on breakdown characteristics is investigated based on TCAD simulations. Design guidelines for p-well and deep-n-well doping profile are developed to shift the onset of the first-stage breakdown to a higher drain voltage and to avoid vertical punch-through leading to early breakdown. An optimal ratio between the OFF-state breakdown voltage and the ON-state resistance could be obtained. Furthermore, the impact of p-well/deep-n-well doping profile on the figure of merits of analog and digital performance is studied. This paper aids in the design of STI drain extended MOSFET devices for widest safe operating area and optimal mixed-signal performance in advanced system-on-chip input-output process technologies.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA
Keywords: Avalanche breakdown; drain extended MOSFET (DeMOS); input-output (I/O); mixed-signal performance; OFF-state breakdown voltage; ON-state resistance; two-stage breakdown; well doping profile
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Depositing User: Id for Latest eprints
Date Deposited: 30 Dec 2015 06:01
Last Modified: 30 Dec 2015 06:01
URI: http://eprints.iisc.ac.in/id/eprint/52935

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