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RF plasma enhanced MOCVD of yttria stabilized zirconia thin films using octanedionate precursors and their characterization

Chopade, SS and Nayak, C. and Bhattacharyya, D and Jha, SN and Tokas, RB and Sahoo, NK and Deo, MN and Biswas, A and Rai, Sanjay and Raman, Thulasi KH and Rao, GM and Kumar, Niranjan and Patil, DS (2015) RF plasma enhanced MOCVD of yttria stabilized zirconia thin films using octanedionate precursors and their characterization. In: APPLIED SURFACE SCIENCE, 355 . pp. 82-92.

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Official URL: http://dx.doi.org/10.1016/j.apsusc.2015.07.090

Abstract

Yttria stabilized zirconia thin films have been deposited by RF plasma enhanced MOCVD technique on silicon substrates at substrate temperature of 400 degrees C. Plasma of precursor vapors of (2,7,7-trimethyl-3,5-octanedionate) yttrium (known as Y(tod)(3)), (2,7,7-trimethyl-3,5-octanedionate) zirconium (known as Zr(tod)(4)), oxygen and argon gases is used for deposition. To the best of our knowledge, plasma assisted MOCVD of YSZ films using octanediaonate precursors have not been reported in the literature so far. The deposited films have been characterized by GIXRD, FTIR, XPS, FESEM, AFM, XANES, EXAFS, EDAX and spectroscopic ellipsometry. Thickness of the films has been measured by stylus profilometer while tribological property measurement has been done to study mechanical behavior of the coatings. Characterization by different techniques indicates that properties of the films are dependent on the yttria content as well as on the structure of the films. (C) 2015 Elsevier B.V. All rights reserved.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Keywords: YSZ; RF plasma; MOCVD; Ellipsometry; EXAFS; XANES
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Depositing User: Id for Latest eprints
Date Deposited: 24 Nov 2015 06:00
Last Modified: 24 Nov 2015 06:00
URI: http://eprints.iisc.ac.in/id/eprint/52800

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