Spotting 2D atomic layers on aluminum nitride thin films

Chandrasekar, Hareesh and Bharadwaj, Krishna B and Vaidyuala, Kranthi Kumar and Suran, Swathi and Bhat, Navakanta and Varma, Manoj and Raghavan, Srinivasan (2015) Spotting 2D atomic layers on aluminum nitride thin films. In: NANOTECHNOLOGY, 26 (42).

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Abstract

Substrates for 2D materials are important for tailoring their fundamental properties and realizing device applications. Aluminum nitride (AIN) films on silicon are promising large-area substrates for such devices in view of their high surface phonon energies and reasonably large dielectric constants. In this paper epitaxial layers of AlN on 2 `' Si wafers have been investigated as a necessary first step to realize devices from exfoliated or transferred atomic layers. Significant thickness dependent contrast enhancements are both predicted and observed for monolayers of graphene and MoS2 on AlN films as compared to the conventional SiO2 films on silicon, with calculated contrast values approaching 100% for graphene on AlN as compared to 8% for SiO2 at normal incidences. Quantitative estimates of experimentally measured contrast using reflectance spectroscopy show very good agreement with calculated values. Transistors of monolayer graphene on AlN films are demonstrated, indicating the feasibility of complete device fabrication on the identified layers.

Item Type:	Journal Article
Publication:	NANOTECHNOLOGY
Publisher:	IOP PUBLISHING LTD
Additional Information:	Copy right for this article belongs to the IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
Keywords:	2D materials; nitrides; optical contrast; substrates; reflectance
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	19 Nov 2015 04:50
Last Modified:	19 Nov 2015 04:50
URI:	http://eprints.iisc.ac.in/id/eprint/52761

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