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Growth of TiO2 Films by RF Magnetron Sputtering for MOS Gate Dielectrics: Influence of Substrate Temperature

Kondaiah, P and Madhavi, V and Sekhar, Chandra M and Rao, Mohan G and Uthanna, S (2015) Growth of TiO2 Films by RF Magnetron Sputtering for MOS Gate Dielectrics: Influence of Substrate Temperature. In: SCIENCE OF ADVANCED MATERIALS, 7 (8). pp. 1640-1648.

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Official URL: http://dx.doi.org/10.1166/sam.2015.2278

Abstract

Titanium dioxide thin films were deposited by RF reactive magnetron sputtering technique on p-type silicon(100) substrates held at temperatures in the range 303-673 K. The influence of substrate temperature on the core level binding energies, chemical bonding configuration, crystallographic structure and dielectric properties was investigated. X-ray photoelectron spectroscopy studies and Fourier transform infrared transmittance data confirmed the formation of stoichiometric films with anatase phase at a substrate temperature of 673 K. The films formed at 303 K were nanocrystalline with amorphous matrix while those deposited at 673 K were transformed in to crystalline phase and growth of grains in pyramidal like structure as confirmed by X-ray diffraction and atomic force microscopy respectively. Metal-oxide-semiconductor capacitors were fabricated with the configuration of Al/TiO2/Si structures. The current voltage, capacitance voltage and conductance voltage characteristics were studied to understand the electrical conduction and dielectric properties of the MOS devices. The leakage current density (at gate voltage of 2 V) decreased from 2.2 x 10(-6) to 1.7 x 10(-7) A/cm(2), the interface trap density decreased from 1.2 x 10(13) to 2.1 x 10(12) cm(-2) eV(-1) and the dielectric constant increased from 14 to 36 with increase of substrate temperature from 303 to 673 K.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the AMER SCIENTIFIC PUBLISHERS, 26650 THE OLD RD, STE 208, VALENCIA, CA 91381-0751 USA
Keywords: Titanium Dioxide; Magnetron Sputtering; Schottky Emission; Dielectric Constant
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Depositing User: Id for Latest eprints
Date Deposited: 19 Aug 2015 05:34
Last Modified: 19 Aug 2015 05:34
URI: http://eprints.iisc.ac.in/id/eprint/52139

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