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Studies on RF Magnetron Sputtered HfO2 Thin Films for Microelectronic Applications

Kondaiah, P and Shaik, Habibuddin and Rao, Mohan G (2015) Studies on RF Magnetron Sputtered HfO2 Thin Films for Microelectronic Applications. In: ELECTRONIC MATERIALS LETTERS, 11 (4). pp. 592-600.

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Official URL: http://dx.doi.org/10.1007/s13391-015-4490-6

Abstract

We investigated the effect of oxygen flow rate during the reactive magnetron sputtering on the compositional, structural, optical and electrical properties of HfO2 films. We also studied the influence of annealing temperature on the structural and electrical properties of optimized HfO2 films of 25 to 30 nm thick. X-ray photoelectron study reveals that the films deposited at 15 SCCM of oxygen flow rate are stoichiometric and have an optical band gap of 5.86 eV. X-ray diffraction indicates that films without oxygen flow are amorphous, and beyond an oxygen flow rate of 5 SCCM exhibit polycrystalline monoclinic structure. At an annealing temperature of 600 degrees C, tetragonal phase was observed besides the monoclinic phase. The dielectric constant of 11 and low leakage currents of 1 x 10(-7) A/cm(2) were achieved for the stoichiometric films. As-deposited films show significant frequency dispersion due to the presence of defect states at the HfO2/Si interface, and it reduces after annealing.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the KOREAN INST METALS MATERIALS, KIM BLDG 6TH FLOOR, SEOCHO-DAERO 56 GIL 38, SEOCHO-GU, SEOUL 137-881, SOUTH KOREA
Keywords: reactive RF magnetron sputtering; optical properties; flat band voltage
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Depositing User: Id for Latest eprints
Date Deposited: 05 Aug 2015 04:39
Last Modified: 05 Aug 2015 04:39
URI: http://eprints.iisc.ac.in/id/eprint/52029

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