Experimental Investigation on Switching Characteristics of High-Current Insulated Gate Bipolar Transistors at Low Currents

Guha, Anirudh and Datta, Aniket and Babu, Rangesh C and Narayanan, G (2014) Experimental Investigation on Switching Characteristics of High-Current Insulated Gate Bipolar Transistors at Low Currents. In: IEEE 2nd International Conference on Electrical Energy Systems (ICEES), JAN 07-09, 2014, Chennai, INDIA, pp. 171-176.

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Abstract

Insulated gate bipolar transistors (IGBTs) are used in high-power voltage-source converters rated up to hundreds of kilowatts or even a few megawatts. Knowledge of device switching characteristics is required for reliable design and operation of the converters. Switching characteristics are studied widely at high current levels, and corresponding data are available in datasheets. But the devices in a converter also switch low currents close to the zero crossings of the line currents. Further, the switching behaviour under these conditions could significantly influence the output waveform quality including zero crossover distortion. Hence, the switching characteristics of high-current IGBTs (300-A and 75-A IGBT modules) at low load current magnitudes are investigated experimentally in this paper. The collector current, gate-emitter voltage and collector-emitter voltage are measured at various low values of current (less than 10% of the device rated current). A specially designed in-house constructed coaxial current transformer (CCT) is used for device current measurement without increasing the loop inductance in the power circuit. Experimental results show that the device voltage rise time increases significantly during turn-off transitions at low currents.

Item Type:	Conference Proceedings
Publisher:	IEEE
Additional Information:	Copy right for this article belongs to the IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
Department/Centre:	Division of Electrical Sciences > Electrical Engineering
Date Deposited:	19 Jul 2015 06:06
Last Modified:	19 Jul 2015 06:06
URI:	http://eprints.iisc.ac.in/id/eprint/51793

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