Effect of ambient on the resistance fluctuations of graphene

Amin, Kazi Rafsanjani and Bid, Aveek (2015) Effect of ambient on the resistance fluctuations of graphene. In: APPLIED PHYSICS LETTERS, 106 (18).

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Abstract

In this letter, we present the results of systematic experimental investigations of the effect of different chemical environments on the low frequency resistance fluctuations of single layer graphene field effect transistors. The shape of the power spectral density of noise was found to be determined by the energetics of the adsorption-desorption of molecules from the graphene surface making it the dominant source of noise in these devices. We also demonstrate a method of quantitatively determining the adsorption energies of chemicals on graphene surface based on noise measurements. We find that the magnitude of noise is extremely sensitive to the nature and amount of the chemical species present. We propose that a chemical sensor based on the measurement of low frequency resistance fluctuations of single layer graphene field effect transistor devices will have extremely high sensitivity, very high specificity, high fidelity, and fast response times. (c) 2015 AIP Publishing LLC.

Item Type:	Journal Article
Publication:	APPLIED PHYSICS LETTERS
Publisher:	AMER INST PHYSICS
Additional Information:	Copy right for this article belongs to the AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	16 Jun 2015 04:33
Last Modified:	16 Jun 2015 04:33
URI:	http://eprints.iisc.ac.in/id/eprint/51694

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