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Si nanowire growth on sapphire: Classical incubation, reverse reaction, and steady state supersaturation

Shakthive, Dhayalan and Rathkanthiwar, Shashwat and Raghavanl, Srinivasan (2015) Si nanowire growth on sapphire: Classical incubation, reverse reaction, and steady state supersaturation. In: JOURNAL OF APPLIED PHYSICS, 117 (16).

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Official URL: http://dx.doi.org/10.1063/1.49189051


Si nanowire growth on sapphire substrates by the vapor-liquid-solid (VLS) method using Au catalyst particles has been studied. Sapphire was chosen as the substrate to ensure that the vapor phase is the only source of Si. Three hitherto unreported observations are described. First, an incubation period of 120-480 s, which is shown to be the incubation period as defined in classical nucleation theory, is reported. This incubation period permits the determination of a desolvation energy of Si from Au-Si alloys of 15 kT. Two, transmission electron microscopy studies of incubation, point to Si loss by reverse reaction as an important part of the mechanism of Si nanowire growth by VLS. Three, calculations using these physico-chemical parameters determined from incubation and measured steady state growth rates of Si nanowires show that wire growth happens from a supersaturated catalyst droplet. (C) 2015 AIP Publishing LLC.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Division of Interdisciplinary Research > Centre for Nano Science and Engineering
Depositing User: Id for Latest eprints
Date Deposited: 29 May 2015 05:48
Last Modified: 29 May 2015 05:48
URI: http://eprints.iisc.ac.in/id/eprint/51605

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