Dielectric relaxation in pulsed excimer laser ablated amorphous zirconium titanate thin films

Victor, P and Nagarju, J and Krupanidhi, SB (2002) Dielectric relaxation in pulsed excimer laser ablated amorphous zirconium titanate thin films. In: 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002, 28 May-1 June, Nara,Japan, pp. 203-206.

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Abstract

Amorphous zirconium titanate thin films was prepared on Pt coated silicon substrates by pulsed excimer laser ablation technique at a very low substrate temperature of $200 - 300^{o}C$ in $O_2$ ambient. The temperature and frequency dispersion of dielectric permittivity was investigated on amorphous $ZrTiO_4$ thin films. These films exhibited a marked dielectric relaxation at temperatures 500 - 700 K in a frequency range of 0.1 - 100kHz. This behaviour was explained based on a dipolar relaxation. Analysis of the temperature dependence on relaxation time and electrical conductivity were done. An investigation on the correlation between mechanisms and models of the dielectric relaxation, origin of dielectric relaxation and the thermally activated motion of ionized defects in the amorphous structure are discussed.

Item Type:	Conference Paper
Publisher:	IEEE
Additional Information:	Copyright 1990 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	20 Jan 2006
Last Modified:	19 Sep 2010 04:23
URI:	http://eprints.iisc.ac.in/id/eprint/5158

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