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High indium non-polar InGaN clusters with infrared sensitivity grown by PAMBE

Mukundan, Shruti and Mohan, Lokesh and Chandan, Greeshma and Roul, Basanta and Krupanidhi, SB and Shinde, Satish and Nanda, KK and Maiti, R and Ray, SK (2015) High indium non-polar InGaN clusters with infrared sensitivity grown by PAMBE. In: AIP ADVANCES, 5 (3).

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Official URL: http://dx.doi.org/10.1063/1.4914842


Studies on the optical properties of InGaN alloy of relatively higher indium content are of potential interest to understand the effect of indium content on the optical band gap of epitaxial InGaN. We report the growth of self assembled non-polar high indium clusters of In0.55Ga0.45N over non-polar (11-20) a-plane In0.17Ga0.83N epilayer grown on a-plane (11-20) GaN/(1-102) r-plane sapphire substrate using plasma assisted molecular beam epitaxy (PAMBE). Such structures are potential candidates for high brightness LEDs emitting in longer wavelengths. The high resolution X-ray diffraction studies revealed the formation of two distinct compositions of InxGa1-xN alloys, which were further confirmed by photoluminescence studies. A possible mechanism for the formation of such structure was postulated which was supported with the results obtained by energy dispersive X-ray analysis. The structure hence grown when investigated for photo-detecting properties, showed sensitivity to both infrared and ultraviolet radiations due to the different composition of InGaN region. (C) 2015 Author(s).

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Depositing User: Id for Latest eprints
Date Deposited: 06 May 2015 05:18
Last Modified: 06 May 2015 05:18
URI: http://eprints.iisc.ac.in/id/eprint/51491

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