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Small signal Nonquasi-Static Model for Common Double-Gate MOSFETs Adapted to Gate Oxide Thickness Asymmetry

Sharan, Neha and Mahapatra, Santanu (2014) Small signal Nonquasi-Static Model for Common Double-Gate MOSFETs Adapted to Gate Oxide Thickness Asymmetry. In: 27th International Conference on VLSI Design / 13th International Conference on Embedded Systems (VLSID) , JAN 05-09, 2014, Mumbai, INDIA, pp. 405-410.

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Official URL: http://dx.doi.org/10.1109/VLSID.2014.76

Abstract

We present a physics-based closed form small signal Nonquasi-static (NQS) model for a long channel Common Double Gate MOSFET (CDG) by taking into account the asymmetry that may prevail between the gate oxide thickness. We use the unique quasi-linear relationship between the surface potentials along the channel to solve the governing continuity equation (CE) in order to develop the analytical expressions for the Y parameters. The Bessel function based solution of the CE is simplified in form of polynomials so that it could be easily implemented in any circuit simulator. The model shows good agreement with the TCAD simulation at-least till 4 times of the cut-off frequency for different device geometries and bias conditions.

Item Type: Conference Proceedings
Additional Information: 27th International Conference on VLSI Design / 13th International Conference on Embedded Systems (VLSID), Mumbai, INDIA, JAN 05-09, 2014
Keywords: Non Quasi-Static Analysis; Double-Gate MOSFET
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Depositing User: Id for Latest eprints
Date Deposited: 21 Apr 2015 07:31
Last Modified: 21 Apr 2015 07:31
URI: http://eprints.iisc.ac.in/id/eprint/51334

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