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Selective growth of single phase VO2(A, B, and M) polymorph thin films

Srivastava, Amar and Rotella, Helene and Saha, Surajit and Pal, Banabir and Kalon, Gopinadhan and Mathew, Sinu and Motapothula, Mallikarjuna and Dykas, Michal and Yang, Ping and Okunishi, Eiji and Sarma, DD and Venkatesan, T (2015) Selective growth of single phase VO2(A, B, and M) polymorph thin films. In: APL MATERIALS, 3 (2).

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Official URL: http://dx.doi.org/10.1063/1.4906880


We demonstrate the growth of high quality single phase films of VO2(A, B, and M) on SrTiO3 substrate by controlling the vanadium arrival rate (laser frequency) and oxidation of the V atoms. A phase diagram has been developed (oxygen pressure versus laser frequency) for various phases of VO2 and their electronic properties are investigated. VO2(A) phase is insulating VO2(B) phase is semi-metallic, and VO2(M) phase exhibits a metal-insulator transition, corroborated by photoelectron spectroscopic studies. The ability to control the growth of various polymorphs opens up the possibility for novel (hetero) structures promising new device functionalities. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
Department/Centre: Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Depositing User: Id for Latest eprints
Date Deposited: 20 Apr 2015 07:25
Last Modified: 20 Apr 2015 07:25
URI: http://eprints.iisc.ac.in/id/eprint/51249

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