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On the Origin of Steep I-V Nonlinearity in Mixed-Ionic-Electronic-Conduction-Based Access Devices

Padilla, Alvaro and Burr, Geoffrey W and Shenoy, Rohit S and Raman, Karthik V and Bethune, Donald S and Shelby, Robert M and Rettner, Charles T and Mohammad, Juned and Virwani, Kumar and Narayanan, Pritish and Deb, Arpan K and Pandey, Rajan K and Bajaj, Mohit and Murali, K V R M and Kurdi, Buelent N and Gopalakrishnan, Kailash (2015) On the Origin of Steep I-V Nonlinearity in Mixed-Ionic-Electronic-Conduction-Based Access Devices. In: IEEE TRANSACTIONS ON ELECTRON DEVICES , MAR 2015, USA, pp. 963-971.

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Official URL: http://dx.doi.org/10.1109/TED.2015.2389832

Abstract

Numerical modeling is used to explain the origin of the large ON/OFF ratios, ultralow leakage, and high ON-current densities exhibited by back-end-of-the-line-friendly access devices based on copper-containing mixed-ionic-electronic-conduction (MIEC) materials. Hall effect measurements confirm that the electronic current is hole dominated; a commercial semiconductor modeling tool is adapted to model MIEC. Motion of large populations of copper ions and vacancies leads to exponential increases in hole current, with a turn-ON voltage that depends on material bandgap. Device simulations match experimental observations as a function of temperature, electrode aspect ratio, thickness, and device diameter.

Item Type: Conference Paper
Additional Information: Copy right for this article belongs to the IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA
Keywords: Semiconductor device modeling; semiconductor-metal interfaces
Department/Centre: Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Depositing User: Id for Latest eprints
Date Deposited: 20 Apr 2015 07:01
Last Modified: 20 Apr 2015 07:01
URI: http://eprints.iisc.ac.in/id/eprint/51225

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