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Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE

Sinha, Neeraj and Roul, Basanta and Mukundan, Shruti and Chandan, Greeshma and Mohan, Lokesh and Jali, VM and Krupanidhi, SB (2015) Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE. In: MATERIALS RESEARCH BULLETIN, 61 . pp. 539-543.

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Official URL: http://dx.doi.org/ 10.1016/j.materresbull.2014.10....


InGaN epitaxial films were grown on GaN template by plasma-assisted molecular beam epitaxy. The composition of indium incorporation in single phase InGaN film was found to be 23%. The band gap energy of single phase InGaN was found to be similar to 2.48 eV: The current-voltage (I-V) characteristic of InGaN/GaN heterojunction was found to be rectifying behavior which shows the presence of Schottky barrier at the interface. Log-log plot of the I-V characteristics under forward bias indicates the current conduction mechanism is dominated by space charge limited current mechanism at higher applied voltage, which is usually caused due to the presence of trapping centers. The room temperature barrier height and the ideality factor of the Schottky junction were found to 0.76 eV and 4.9 respectively. The non-ideality of the Schottky junction may be due to the presence of high pit density and dislocation density in InGaN film. (C) 2014 Elsevier Ltd. All rights reserved.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the PERGAMON-ELSEVIER SCIENCE LTD, THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND
Keywords: Semiconductors; Epitaxial growth; Raman spectroscopy; X-ray diffraction; Electrical properties
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Depositing User: Id for Latest eprints
Date Deposited: 24 Feb 2015 05:48
Last Modified: 24 Feb 2015 05:48
URI: http://eprints.iisc.ac.in/id/eprint/50854

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