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Stress Engineering using Si3N4 for stiction free release of SOI beams

Gupta, Suman A and Shenoy, Apoorva and Monisha, M and Uma, V and Vijayaraghavan, MN and Bhat, Navakanta (2014) Stress Engineering using Si3N4 for stiction free release of SOI beams. In: 17th International Workshop on the Physics of Semiconductor Devices (IWPSD), DEC 10-14, 2013, Noida, INDIA, pp. 491-493.

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Official URL: http://dx.doi.org/10.1007/978-3-319-03002-9_123

Abstract

We report on the effect of thin silicon nitride (Si3N4) induced tensile stress on the structural release of 200nm thick SOI beam, in the surface micro-machining process. A thin (20nm / 100nm) LPCVD grown Si3N4 is shown to significantly enhance the yield of released beam in wet release technique. This is especially prominent with increase in beam length, where the beams have higher tendency for stiction. We attribute this yield enhancement to the nitride induced tensile stress, as verified by buckling tendency and resonance frequency data obtained from optical profilometry and laser doppler vibrometry.

Item Type: Conference Proceedings
Additional Information: Copyright for this article belongs to the SPRINGER INT PUBLISHING AG, GEWERBESTRASSE 11, CHAM, CH-6330, SWITZERLAND
Keywords: fixed-fixed beam; buckling distance; yield; tensile stress SOL
Department/Centre: Division of Interdisciplinary Research > Centre for Nano Science and Engineering
Depositing User: Id for Latest eprints
Date Deposited: 14 Feb 2015 13:36
Last Modified: 14 Feb 2015 13:36
URI: http://eprints.iisc.ac.in/id/eprint/50834

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