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Room Temperature-Processed TiO2 MIM Capacitors for DRAM Applications

Padmanabhan, Revathy and Bhat, Navakanta and Mohan, S (2014) Room Temperature-Processed TiO2 MIM Capacitors for DRAM Applications. In: 17th International Workshop on the Physics of Semiconductor Devices (IWPSD), DEC 10-14, 2013, Noida, INDIA, pp. 37-39.

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Official URL: http://dx.doi.org/10.1007/978-3-319-03002-9_10

Abstract

We report the room temperature fabrication of Ta/TiO2/Ta metal-insulator-metal (MIM) capacitors (mainly, for DRAM applications). The fabricated devices show high capacitance density (similar to 15 fF/mu m(2)), and low leakage current density of 6.4 X 10(-8) A/cm(2) (27 degrees C) and 3.3 x 10(-6) A/cm(2) (125 degrees C) at -1 V. We analyze the electrical and material characteristics of the fabricated capacitors, and compare the device performance of these capacitors with other TiO2 and TiO2-based MIM capacitors reported in recent literature.

Item Type: Conference Proceedings
Additional Information: Copyright for this article belongs to the SPRINGER INT PUBLISHING AG, GEWERBESTRASSE 11, CHAM, CH-6330, SWITZERLAND
Keywords: Terms metal-insulator-metal (MIM); Ta; TiO2
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Depositing User: Id for Latest eprints
Date Deposited: 14 Feb 2015 13:36
Last Modified: 14 Feb 2015 13:36
URI: http://eprints.iisc.ac.in/id/eprint/50831

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