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Influence of curvature on the device physics of thin film transistors on flexible substrates

Amalraj, Rex and Sambandan, Sanjiv (2014) Influence of curvature on the device physics of thin film transistors on flexible substrates. In: JOURNAL OF APPLIED PHYSICS, 116 (16).

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Official URL: http://dx.doi.org/ 10.1063/1.4900440

Abstract

Thin film transistors (TFTs) on elastomers promise flexible electronics with stretching and bending. Recently, there have been several experimental studies reporting the behavior of TFTs under bending and buckling. In the presence of stress, the insulator capacitance is influenced due to two reasons. The first is the variation in insulator thickness depending on the Poisson ratio and strain. The second is the geometric influence of the curvature of the insulator-semiconductor interface during bending or buckling. This paper models the role of curvature on TFT performance and brings to light an elegant result wherein the TFT characteristics is dependent on the area under the capacitance-distance curve. The paper compares models with simulations and explains several experimental findings reported in literature. (C) 2014 AIP Publishing LLC.

Item Type: Journal Article
Additional Information: Copyright for this article belongs to the AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Depositing User: Id for Latest eprints
Date Deposited: 20 Dec 2014 05:24
Last Modified: 20 Dec 2014 05:24
URI: http://eprints.iisc.ac.in/id/eprint/50480

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