Reactive Diffusion in the Re-Si System

Roy, Soumitra and Paul, Aloke (2014) Reactive Diffusion in the Re-Si System. In: JOURNAL OF PHASE EQUILIBRIA AND DIFFUSION, 35 (5). pp. 631-635.

PDF jou_pha_equ_dif_35-5_631_2014.pdf - Published Version Restricted to Registered users only Download (530kB) | Request a copy

Abstract

A study on reactive diffusion is conducted in the Re-Si system. According to the study, ReSi1.8 phase grows with much higher thickness than the Re2Si phase, in the interdiffusion zone of bulk diffusion couples. The activation energy for integrated diffusion of ReSi1.8 is estimated to be 605 +/- 23 kJ/mol. The growth of the Re2Si phase is studied by considering an incremental diffusion couple of Re/ReSi1.8. Analysis based on the calculation of integrated diffusion coefficients indicates the reason underlying the observed high difference between the growth rates of the ReSi1.8 and Re2Si phases.

Item Type:	Journal Article
Publication:	JOURNAL OF PHASE EQUILIBRIA AND DIFFUSION
Publisher:	SPRINGER
Additional Information:	Copy right for this article belongs to the SPRINGER, 233 SPRING ST, NEW YORK, NY 10013 USA
Keywords:	defects; diffusion; intermetallic compounds; microstructure
Department/Centre:	Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited:	20 Nov 2014 04:40
Last Modified:	20 Nov 2014 04:40
URI:	http://eprints.iisc.ac.in/id/eprint/50307

Actions (login required)

View Item