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High pressure studies on the electrical resistivity of Ge-Te-Tl glasses

Prasad, KNN and Rahman, MM and Rukmani, K and Asokan, S (2014) High pressure studies on the electrical resistivity of Ge-Te-Tl glasses. In: HIGH PRESSURE RESEARCH, 34 (3). pp. 309-316.

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Official URL: http://dx.doi.org/ 10.1080/08957959.2014.941361

Abstract

The variation of electrical resistivity in the system of glasses Ge17Te83-xTlx, with (1 <= x <= 13), has been studied as a function of high pressure for pressures up to 10 GPa. It is found that the normalized electrical resistivity decreases continuously with the increase in pressure and shows a sudden drop at a particular pressure (transition pressure), indicating the presence of a transition from semiconductor to near-metallic at these pressures which are in the range 3.0-5.0 GPa. This transition pressure is seen to decrease with the increase in the percentage content of thallium due to increasing metallicity of the thallium. The transition is reversible under application of pressure and X-ray diffraction of samples recovered after pressurization show that they remain amorphous after undergoing a pressurization decompression cycle.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the TAYLOR & FRANCIS LTD, 4 PARK SQUARE, MILTON PARK, ABINGDON OX14 4RN, OXON, ENGLAND
Keywords: chalcogenides; high pressure; electrical resistivity
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Depositing User: Id for Latest eprints
Date Deposited: 12 Nov 2014 05:29
Last Modified: 12 Nov 2014 05:29
URI: http://eprints.iisc.ac.in/id/eprint/50238

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