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Enhancement in threshold voltage with thickness in memory switch fabricated using GeSe1.5S0.5 thin films

Kumar, Anant RT and Das, Chandasree and Lekha, Chithra P and Asokan, S and Sanjeeviraja, C and Padiyan, Pathinettam D (2014) Enhancement in threshold voltage with thickness in memory switch fabricated using GeSe1.5S0.5 thin films. In: JOURNAL OF ALLOYS AND COMPOUNDS, 615 . pp. 629-635.

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Official URL: http://dx.doi.org/10.1016/j.jallcom.2014.07.068

Abstract

Investigations on the electrical switching, structural, optical and photoacoustic analysis have been undertaken on chalcogenide GeSe1.5S0.5 thin films of various thicknesses prepared by vacuum evaporation technique. The decrease of band gap energy with increase in film thickness has been explained using the `density of states model'. The structural units of the films are characterized using Raman spectroscopy and the deconvoluted Raman peaks obtained from Gaussian fit around 188 cm(-1), 204 cm(-1) and 214 cm(-1) favors Ge-chalcogen tetrahedral units forming corner and edge sharing tetrahedra. All the thin films samples have been exhibited memory-type electrical switching behavior. An enhancement in the threshold voltages of GeSe1.5S0.5 thin films have been observed with increase in film thickness. The thickness dependence of switching voltages provide an insight into the switching mechanism and it is explained by the Joule heating effect. (C) 2014 Elsevier B.V. All rights reserved.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLAND.
Keywords: Amorphous; Thin films; Vapor deposition; Acoustic properties; Phase transitions; Memory switching
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Depositing User: Id for Latest eprints
Date Deposited: 08 Nov 2014 05:32
Last Modified: 08 Nov 2014 05:32
URI: http://eprints.iisc.ac.in/id/eprint/50210

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