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Germanane: a Low Effective Mass and High Bandgap 2-D Channel Material for Future FETs

Ghosh, Ram Krishna and Brahma, Madhuchhanda and Mahapatra, Santanu (2014) Germanane: a Low Effective Mass and High Bandgap 2-D Channel Material for Future FETs. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 (7). pp. 2309-2315.

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Official URL: http://dx.doi.org/10.1109/TED.2014.2325136

Abstract

We investigate the electronic properties of Germanane and analyze its importance as 2-D channel material in switching devices. Considering two types of morphologies, namely, chair and boat, we study the real band structure, the effective mass variation, and the complex band structure of unstrained Germanane by density-functional theory. The chair morphology turns out to be a more effective channel material for switching devices than the boat morphology. Furthermore, we study the effect of elastic strain, van der Waals force, and vertical electric field on these band structure properties. Due to its very low effective mass with relatively high-energy bandgap, in comparison with the other 2-D materials, Germanane appears to provide superior performance in switching device applications.

Item Type: Journal Article
Additional Information: Copyright for this article belongs to the IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA
Keywords: 2-D crystal; ab initio simulation; effective mass; MOSFET; real and complex band structure; tunnel field-effect transistor (TFET)
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Depositing User: Id for Latest eprints
Date Deposited: 11 Aug 2014 04:41
Last Modified: 11 Aug 2014 04:41
URI: http://eprints.iisc.ac.in/id/eprint/49536

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