ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Ferroelectric and optical properties of Ba5Li2Ti2Nb8O30 ceramics potential for memory applications

Praveena, K and Varma, KBR (2014) Ferroelectric and optical properties of Ba5Li2Ti2Nb8O30 ceramics potential for memory applications. In: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 25 (7). pp. 3103-3108.

[img] PDF
jou-Mat-Sci-Mat-Ele_25-7-3103-2014.pdf - Published Version
Restricted to Registered users only

Download (890kB) | Request a copy
Official URL: http://dx.doi.org/10.1007/s10854-014-1990-3

Abstract

Giant grained (42 mu m) translucent Ba5Li2Ti2Nb8O30 ceramic was fabricated by conventional sintering technique using the powders obtained via solid state reaction route. These samples were confirmed to possess tetragonal tungsten bronze structure (P4bm) at room temperature. The scanning electron microscopy established the average grain size to be close to 20 mu m. The photoluminescence studies carried out on these ceramics indicated sharp emission bands around 433 and 578 nm at an excitation wavelength of 350 nm which were attributed to band-edge emission as the band gap was 2.76 eV determined by Kubelka-Munk function. The dielectric properties of these ceramics were studied over wide frequency range (100-1 MHz) at room temperature. The decrease in dielectric constant with frequency could be explained on the basis of Koops theory. The dielectric constant and the loss were found to decrease with increasing frequency. The Curie temperature was confirmed to be similar to 370 A degrees C based on the dielectric anomaly observed when these measurements were carried out over a temperature range of 30-500 A degrees C. This shows a deviation from Curie-Weiss behaviour and hence an indicator of the occurrence of disordering in the system, the gamma = 1.23 which confirms the diffuse ferroelectric transition. These ceramics at room temperature exhibited P-E hysteresis loops, though not well saturated akin to that of their single crystalline counterparts. These are the suitable properties for ferroelectric random access memory applications.

Item Type: Journal Article
Publication: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Publisher: SPRINGER
Additional Information: copyright for this article belongs to the SPRINGER, VAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDS
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 16 Jul 2014 08:52
Last Modified: 16 Jul 2014 08:52
URI: http://eprints.iisc.ac.in/id/eprint/49407

Actions (login required)

View Item View Item