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Electrical switching, SET-RESET, and Raman scattering studies on Ge15Te80-xIn5Agx glasses

Varma, Sreevidya G and Muthu, DVS and Sood, AK and Asokan, S (2014) Electrical switching, SET-RESET, and Raman scattering studies on Ge15Te80-xIn5Agx glasses. In: JOURNAL OF APPLIED PHYSICS, 115 (16).

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Official URL: http://dx.doi.org/10.1063/1.4873237

Abstract

Bulk Ge15Te85-xIn5Agx glasses are shown to exhibit electrical switching with switching/threshold voltages in the range of 70-120V for a sample thickness of 0.3 mm. Further, the samples exhibit threshold or memory behavior depending on the ON state current. The compositional studies confirm the presence of an intermediate phase in the range 8 <= x <= 16, revealed earlier by thermal studies. Further, SET-RESET studies have been performed by these glasses using a triangular pulse of 6 mA amplitude (for SET) and 21 mA amplitude (for RESET). Raman studies of the samples after the SET and RESET operations reveal that the SET state is a crystalline phase which is obtained by thermal annealing and the RESET state is the glassy state, similar to the as-quenched samples. It is interesting to note that the samples in the intermediate phase, especially compositions at x = 10, 12, and 14 withstand more set-reset cycles. This indicates compositions in the intermediate phase are better suited for phase change memory applications. (C) 2014 AIP Publishing LLC.

Item Type: Journal Article
Additional Information: copyright for this article belongs to AMER INST PHYSICS, USA.
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Division of Physical & Mathematical Sciences > Physics
Depositing User: Id for Latest eprints
Date Deposited: 12 Jun 2014 10:37
Last Modified: 12 Jun 2014 10:37
URI: http://eprints.iisc.ac.in/id/eprint/49171

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