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Origin of noise in two dimensionally doped Silicon and Germanium

Shamim, Saquib and Mahapatra, Suddhasatta and Scappucci, Giordano and Polley, Craig and Simmons, Michelle Y and Ghosh, Arindam (2013) Origin of noise in two dimensionally doped Silicon and Germanium. In: 31st International Conference on the Physics of Semiconductors (ICPS), JUL 29-AUG 03, 2012, Zurich, SWITZERLAND, pp. 413-414.

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Official URL: http://dx.doi.org/10.1063/1.4848461

Abstract

We present the study of low-frequency noise, or 1/f noise, in degenerately doped Si: P and Ge: P delta-layers at low temperatures. For the Si: P d-layers we find that the noise is several orders of magnitude lower than that of bulk Si: P systems in the metallic regime and is one of the lowest values reported for doped semiconductors. Ge: P d-layers as a function of perpendicular magnetic field, shows a factor of two reduction in noise magnitude at the scale of B-phi, where B-phi is phase breaking field. We show that this is a characteristic feature of universal conductance fluctuations.

Item Type: Conference Proceedings
Additional Information: Copyright for this article belongs to the AMER INST PHYSICS, USA
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Id for Latest eprints
Date Deposited: 15 May 2014 05:59
Last Modified: 15 May 2014 06:00
URI: http://eprints.iisc.ac.in/id/eprint/48897

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