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Topological Excitations in Semiconductor Heterostructures

Koushik, R and Baenninger, Matthias and Narayan, Vijay and Mukerjee, Subroto and Pepper, Michael and Farrer, Ian and Ritchie, David A and Ghosh, Arindam (2013) Topological Excitations in Semiconductor Heterostructures. In: 31st International Conference on the Physics of Semiconductors (ICPS, JUL 29-AUG 03, 2012, Zurich, SWITZERLAND, pp. 265-266.

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Official URL: http://dx.doi.org/10.1063/1.4848387

Abstract

Topological defects play an important role in the melting phenomena in two-dimensions. In this work, we report experimental observation of topological defect induced melting in two-dimensional electron systems (2DES) in the presence of strong Coulomb interaction and disorder. The phenomenon is characterised by measurement of conductivity which goes to zero in a Berezinskii-Kosterlitz-Thouless like transition. Further evidence is provided via low-frequency conductivity noise measurements.

Item Type: Conference Proceedings
Additional Information: Copyright for this article belongs to the AMER INST PHYSICS, USA
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Id for Latest eprints
Date Deposited: 15 May 2014 05:56
Last Modified: 15 May 2014 05:57
URI: http://eprints.iisc.ac.in/id/eprint/48895

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