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Electrostatic modulation of periodic potentials in a two-dimensional electron gas: from antidot lattice to quantum dot lattice

Goswami, Srijit and Aamir, Mohammed Ali and Shamim, Saquib and Siegert, Christoph and Pepper, Michael and Farrer, Ian and Ritchie, DavidA and Ghosh, Arindam (2013) Electrostatic modulation of periodic potentials in a two-dimensional electron gas: from antidot lattice to quantum dot lattice. In: 31st International Conference on the Physics of Semiconductors (ICPS), JUL 29-AUG 03, 2012, Zurich, SWITZERLAND, pp. 257-258.

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Official URL: http://dx.doi.org/10.1063/1.4848383

Abstract

We use a dual gated device structure to introduce a gate-tuneable periodic potential in a GaAs/AlGaAs two dimensional electron gas (2DEG). Using only a suitable choice of gate voltages we can controllably alter the potential landscape of the bare 2DEG, inducing either a periodic array of antidots or quantum dots. Antidots are artificial scattering centers, and therefore allow for a study of electron dynamics. In particular, we show that the thermovoltage of an antidot lattice is particularly sensitive to the relative positions of the Fermi level and the antidot potential. A quantum dot lattice, on the other hand, provides the opportunity to study correlated electron physics. We find that its current-voltage characteristics display a voltage threshold, as well as a power law scaling, indicative of collective Coulomb blockade in a disordered background.

Item Type: Conference Proceedings
Additional Information: Copyright for this article belongs to the AMER INST PHYSICS, USA
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Id for Latest eprints
Date Deposited: 15 May 2014 05:51
Last Modified: 11 Feb 2019 05:18
URI: http://eprints.iisc.ac.in/id/eprint/48894

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