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Transport properties of CuIn1-xAlxSe2/AZnO heterostructure for low cost thin film photovoltaics

Murali, Banavoth and Krupanidhi, SB (2014) Transport properties of CuIn1-xAlxSe2/AZnO heterostructure for low cost thin film photovoltaics. In: DALTON TRANSACTIONS, 43 (5). pp. 1974-1983.

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Official URL: http://dx.doi.org/10.1039/c3dt52515e

Abstract

CuIn1-xAlxSe2 (CIASe) thin films were grown by a simple sol-gel route followed by annealing under vacuum. Parameters related to the spin-orbit (Delta(SO)) and crystal field (Delta(CF)) were determined using a quasi-cubic model. Highly oriented (002) aluminum doped (2%) ZnO, 100 nm thin films, were co-sputtered for CuIn1-xAlxSe2/AZnO based solar cells. Barrier height and ideality factor varied from 0.63 eV to 0.51 eV and 1.3186 to 2.095 in the dark and under 1.38 A. M 1.5 solar illumination respectively. Current-voltage characteristics carried out at 300 K were confined to a triangle, exhibiting three limiting conduction mechanisms: Ohms law, trap-filled limit curve and SCLC, with 0.2 V being the cross-over voltage, for a quadratic transition from Ohm's to Child's law. Visible photodetection was demonstrated with a CIASe/AZO photodiode configuration. Photocurrent was enhanced by one order from 3 x 10(-3) A in the dark at 1 V to 3 x 10(-2) A upon 1.38 sun illumination. The optimized photodiode exhibits an external quantum efficiency of over 32% to 10% from 350 to 1100 nm at high intensity 17.99 mW cm(-2) solar illumination. High responsivity R-lambda similar to 920 A W-1, sensitivity S similar to 9.0, specific detectivity D* similar to 3 x 10(14) Jones, make CIASe a potential absorber for enhancing the forthcoming technological applications of photodetection.

Item Type: Journal Article
Additional Information: copyright for this article belongs to ROYAL SOC CHEMISTRY, ENGLAND
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Depositing User: Id for Latest eprints
Date Deposited: 27 Jan 2014 06:30
Last Modified: 27 Jan 2014 06:31
URI: http://eprints.iisc.ac.in/id/eprint/48251

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