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Switching and release dynamics of an electrostatically actuated MEMS switch under the influence of squeeze-film damping

Shekhar, S and Vinoy, KJ and Ananthasuresh, GK (2012) Switching and release dynamics of an electrostatically actuated MEMS switch under the influence of squeeze-film damping. In: TechConnect World 2012, June 21, 2012, California, U.S.A.

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This paper reports analytical modeling, simulation and experimental validation for switching and release times of an electrostatically actuated micromachined switch. Presented work is an extension of our earlier work [1] that analytically argued, and numerically and experimentally demonstrated, why pull-in time is larger that pull-up time when the actuation voltage is less than twice of the pull-in voltage. In this paper, switching dynamics is investigated under the influence of squeeze-film damping. Tests were performed on SOI (silicon-on-insulator) based parallel beams structures.Typical voltage requirement for actuation is in the range of 10-30 V. All the experiments were performed in normal atmospheric pressure. Measurement results confirm that the quality factor Q has appreciable effect on the release time compared to the switching time. The quality factor Q is extracted from the response measurement and compared with the ANSYS simulation result. In addition, the dynamic pull-in effect has also been studied and reported in this paper. A contribution of this work includes the effect of various phenomena such as squeeze-film damping, dynamic pull-in, and frequency pull-in effects on the switching dynamics of a MEMS switch.

Item Type: Conference Paper
Additional Information: Copyright of this article belongs to TechConnect World.
Keywords: RF MEMS Switch; Switching Speed; Pull-in Time; Frequency Pull-in Effect; SOI MUMPs
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Depositing User: Francis Jayakanth
Date Deposited: 19 Dec 2013 09:43
Last Modified: 23 Dec 2013 05:19
URI: http://eprints.iisc.ac.in/id/eprint/48027

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