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Effect of FIB milling on MEMS SOI cantilevers

Venkatesh, C and Singh, PP and Renilkumar, M and Varma, M and Bhat, N and Pratap, R and Martyniuk, M and Keating, A and Umama-Membreno, GA and Silva, KKMBD and Dell, JM and Faraone, L (2012) Effect of FIB milling on MEMS SOI cantilevers. In: 2012 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD), 12-14 Dec. 2012, Melbourne, VIC.

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Official URL: http://dx.doi.org/10.1109/COMMAD.2012.6472412

Abstract

Stress induced by Focused Ion Beam (FIB) milling of cantilevers fabricated on silicon-on-insulator (SOI) wafer has been studied. Milling induces stress gradients ranging from -10MPa/μm to -120MPa/μm, depending on the location of cantilevers from the point of milling. Simulations were done to estimate the stress in the milled cantilevers.

Item Type: Conference Paper
Additional Information: Copyright of this article belongs to IEEE.
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Depositing User: Francis Jayakanth
Date Deposited: 02 Dec 2013 10:41
Last Modified: 02 Dec 2013 10:41
URI: http://eprints.iisc.ac.in/id/eprint/47874

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