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Modeling and analysis of MOS capacitor controlled by independent double gates

Thakur, PK and Mahapatra, S (2012) Modeling and analysis of MOS capacitor controlled by independent double gates. In: Nanotech Conference and Expo 2012 Workshop on Compact Modeling, June 18-21, 2012, Santa Clara, CA.

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Official URL: http://www.techconnectworld.com/World2012/a.html?i...

Abstract

This paper, for the first time, explores the charcatersictics of MOS capacitor controlled by independent double gates by numerical simulation and analytical modeling for its possible use in RF circuit design as a varactor. By numerical simulation it is shown how the quasi-static and non-quasi-static characteristics of the first gate capacitance could be tuned by the second gate biases. Effect of body doping and energy quantization are also discussed in this regard. A semi-empirical quasi-static model is also developed by using the existing incomplete Poisson solution of independent double gate transistors. Proposed model, which is valid from accumulation to inversion, is shown to have excellent agreement with numerical simulation for practical bias conditions.

Item Type: Conference Paper
Additional Information: Copyright of this article belongs to TechConnect World.
Keywords: Compact Modeling; MOS Capacitors; Doubel Gate MOSFETs; Varactors
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Depositing User: Francis Jayakanth
Date Deposited: 29 Nov 2013 05:49
Last Modified: 29 Nov 2013 05:49
URI: http://eprints.iisc.ac.in/id/eprint/47868

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