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Photovoltaic structures using thermally evaporated SnS and CdS thin films

Hegde, SS and Kunjomana, AG and Prashantha, M and Kumar, C and Ramesh, K (2013) Photovoltaic structures using thermally evaporated SnS and CdS thin films. In: THIN SOLID FILMS, 545 . pp. 543-547.

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Official URL: http://dx.doi.org/10.1016/j.tsf.2013.08.078


Polycrystalline tin sulfide thin films were prepared by thermal evaporation technique. The films grown at substrate temperature of 300 degrees C had an orthorhombic crystal structure with strong preferred orientation along (111) plane. Electrical resistivity of the deposited films was about 32.5 Omega cm with a direct optical band gap of 1.33 eV. Carrier concentration and mobility of charge carriers estimated from the Hall measurement were found to be 6.24 x 10(15) cm(-3) and 30.7 cm(2)V(-1) s(-1) respectively. Heterojunction solar cells were fabricated in superstrate configuration using thermally evaporated SnS as an absorber layer and CdS, In: CdS as window layer. The resistivity of pure CdS thin film of a thickness of 320 nm was about 1-2 Omega cm and was reduced to 40 x 10(-3) Omega cm upon indium doping. The fabricated solar cells were characterized using solar simulator. The solar cells with indium doped CdS window layer showed improved performance as compared to pure CdS window layer. The best device had a conversion efficiency of 0.4% and a fill factor of 33.5%. (C) 2013 Elsevier B.V. All rights reserved.

Item Type: Journal Article
Additional Information: Copyright for this article belongs to Elesvier
Keywords: Tin sulfide; Thin films; Thermal evaporation; Solar cell; Photovoltaic material; Efficiency
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 29 Oct 2013 05:54
Last Modified: 29 Oct 2013 05:54
URI: http://eprints.iisc.ac.in/id/eprint/47608

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