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Temperature dependence of resistance and crystallization in amorphous Si15Te85-xGex thin films

Lakshmi, KP and Asokan, S (2013) Temperature dependence of resistance and crystallization in amorphous Si15Te85-xGex thin films. In: Journal of Non-Crystalline Solids, 375 . pp. 94-98.

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Official URL: http://dx.doi.org/10.1016/j.jnoncrysol.2013.05.035

Abstract

Amorphous thin chalcogenide Si15Te85-xGex films (x: 5, 9, 10, 11, 12) are prepared by flash evaporation and the temperature dependence of resistance of these films has been studied in the temperature range 25-250 degrees C. All the compositions show a linear variation of resistance in this temperature range. Apart from the linear variation, a sharp reduction in resistance at one or at two distinct temperatures (T-TR1/T-TR2) is seen. Thin films annealed at these temperatures, when subjected to X-ray diffraction studies suggest that the dominant crystalline phase at T-TR1 and at T-TR2 is the same and the two dips are associated with varying levels of crystallization. This is also reflected in the atomic force microscopic (AFM) study. Further, the resistance of these two phases shows no drift when the films are annealed for varying lengths of time (10 min to 120 min) suggesting the stability of the phases.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: Chalcogenide Glasses; Phase Change Memories; Crystallization; XRD; AFM
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Depositing User: Francis Jayakanth
Date Deposited: 29 Oct 2013 05:44
Last Modified: 29 Oct 2013 05:44
URI: http://eprints.iisc.ac.in/id/eprint/47475

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