ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Study on important diffusion parameters of binary Ni3Sn4 phase

Ghosh, C (2013) Study on important diffusion parameters of binary Ni3Sn4 phase. In: Journal of Materials Science: Materials in Electronics, 24 (7). pp. 2558-2561.

[img] PDF
Jou_Mate_Scie_Mat_Elec_24-7_2558_2013.pdf - Published Version
Restricted to Registered users only

Download (358kB) | Request a copy
Official URL: http://dx.doi.org/10.1007/s10854-013-1133-2

Abstract

Important diffusion parameters, such as-parabolic growth constant, integrated diffusivity, ratio of intrinsic diffusivities of species Ni and Sn, Kirkendall marker velocity and the activation energy for diffusion kinetics of binary Ni3Sn4 phase have been investigated with the help of incremental diffusion couple technique (Sn/Ni0.57Sn0.43) in the temperature range 200-150 degrees C. Low activation energy extracted from Arrhenius plot indicates grain boundary controlled diffusion process. The species Sn is three times faster than Ni at 200 degrees C. Further, the activation energy of Sn tracer diffusivity is greater than that of Ni.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Springer.
Department/Centre: Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Depositing User: Francis Jayakanth
Date Deposited: 21 Sep 2013 13:07
Last Modified: 21 Sep 2013 13:07
URI: http://eprints.iisc.ac.in/id/eprint/47262

Actions (login required)

View Item View Item