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Modeling of temperature and field-dependent electron mobility in a single-layer graphene sheet

Verma, Rekha and Bhattacharya, Sitangshu and Mahapatra, Santanu (2013) Modeling of temperature and field-dependent electron mobility in a single-layer graphene sheet. In: IEEE Transactions on Electron Devices, 60 (8). pp. 2695-2698.

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Official URL: http://dx.doi.org/10.1109/TED.2013.2270035

Abstract

In this paper, we address a physics-based analytical model of electric-field-dependent electron mobility (mu) in a single-layer graphene sheet using the formulation of Landauer and Mc Kelvey's carrier flux approach under finite temperature and quasi-ballistic regime. The energy-dependent, near-elastic scattering rate of in-plane and out-of-plane (flexural) phonons with the electrons are considered to estimate mu over a wide range of temperature. We also demonstrate the variation of mu with carrier concentration as well as the longitudinal electric field. We find that at high electric field (>10(6) Vm(-1)), the mobility falls sharply, exhibiting the scattering between the electrons and flexural phonons. We also note here that under quasi-ballistic transport, the mobility tends to a constant value at low temperature, rather than in between T-2 and T-1 in strongly diffusive regime. Our analytical results agree well with the available experimental data, while the methodologies are put forward to estimate the other carrier-transmission-dependent transport properties.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to IEEE-Inst Electrical Electronics Engineers Inc.
Keywords: Flexural Phonons; Graphene; Mobility
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Depositing User: Francis Jayakanth
Date Deposited: 21 Sep 2013 13:02
Last Modified: 21 Sep 2013 13:02
URI: http://eprints.iisc.ac.in/id/eprint/47250

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