Performance and reliability of Gd2O3 and stacked Gd2O3-Eu2O3 metal-insulator-metal capacitors

Padmanabhan, Revathy and Bhat, Navakanta and Mohan, Sangeneni (2013) Performance and reliability of Gd2O3 and stacked Gd2O3-Eu2O3 metal-insulator-metal capacitors. In: IEEE Transactions on Electron Devices, 60 (5). pp. 1523-1528.

PDF IEEE_Tran_Ele_Devi_60-5_1523_2013.pdf - Published Version Restricted to Registered users only Download (1MB) | Request a copy

Abstract

Gd2O3-based metal-insulator-metal capacitors have been characterized with single layer (Gd2O3) and bilayer (Gd2O3/Eu2O3 and Eu2O3/Gd2O3) stacks for analog and DRAM applications. Although single layer Gd2O3 capacitors provide highest capacitance density (15 fF/mu m(2)), they suffer from high leakage current density, poor capacitance density-voltage linearity, and reliability. The stacked dielectrics help to reduce leakage current density (1.2x10(-5) A/cm(2) and 2.7 x 10(-5) A/cm(2) for Gd2O3/Eu2O3 and Eu2O3/Gd2O3, respectively, at -1 V), improve quadratic voltage coefficient of capacitance (331 ppm/V-2 and 374 ppm/V-2 for Gd2O3/Eu2O3 and Eu2O3/Gd2O3, respectively, at 1 MHz), and improve reliability, with a marginal reduction in capacitance density. This is attributed to lower trap heights as determined from Poole-Frenkel conduction mechanism, and lower defect density as determined from electrode polarization model.

Item Type:	Journal Article
Publication:	IEEE Transactions on Electron Devices
Publisher:	IEEE-Inst Electrical Electronics Engineers Inc
Additional Information:	Copyright of this article belongs to IEEE-Inst Electrical Electronics Engineers Inc.
Keywords:	Constant Current Stress (CCS); Constant Voltage Stress (CVS); Eu2O3; Gd2O3; Metal-Insulator-Metal (MIM); Reliability; Voltage Coefficient of Capacitance (VCC)
Department/Centre:	Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited:	05 Jul 2013 06:04
Last Modified:	05 Jul 2013 06:04
URI:	http://eprints.iisc.ac.in/id/eprint/46796

Actions (login required)

View Item