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Scattering of carriers by charged dislocations in semiconductors

Bansal, Bhavtosh and Ghosh, Rituparna and Venkataraman, V (2013) Scattering of carriers by charged dislocations in semiconductors. In: Journal of Applied Physics, 113 (16). 163705_1-163705_6.

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Official URL: http://dx.doi.org/10.1063/1.4803121


The scattering of carriers by charged dislocations in semiconductors is studied within the framework of the linearized Boltzmann transport theory with an emphasis on examining consequences of the extreme anisotropy of the cylindrically symmetric scattering potential. A new closed-form approximate expression for the carrier mobility valid for all temperatures is proposed. The ratios of quantum and transport scattering times are evaluated after averaging over the anisotropy in the relaxation time. The value of the Hall scattering factor computed for charged dislocation scattering indicates that there may be a factor of two error in the experimental mobility estimates using the Hall data. An expression for the resistivity tensor when the dislocations are tilted with respect to the plane of transport is derived. Finally, an expression for the isotropic relaxation time is derived when the dislocations are located within the sample with a uniform angular distribution.

Item Type: Journal Article
Publication: Journal of Applied Physics
Publisher: American Institute of Physics
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 26 Jun 2013 10:04
Last Modified: 26 Jun 2013 10:04
URI: http://eprints.iisc.ac.in/id/eprint/46757

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