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Molecular beam epitaxial growth of (11-22) GaN on m-plane sapphire

Rajpalke, Mohana K and Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Krupanidhi, SB (2013) Molecular beam epitaxial growth of (11-22) GaN on m-plane sapphire. In: Physica Status Solidi C - Current Topics in Solid State Physics, 10 (3). pp. 381-384.

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Official URL: http://dx.doi.org/10.1002/pssc.201200723

Abstract

The structural and optical properties of semipolar (1 1 -2 2) GaN grown on m-plane (1 0 -1 0) sapphire substrates by molecular beam epitaxy were investigated. An in-plane orientation relationship was found to be 1 -1 0 0] GaN parallel to 1 2-1 0] sapphire and -1 -1 2 3] GaN parallel to 0 0 0 1] sapphire for semipolar GaN on m-plane sapphire substrates. The near band emission (NBE) was found at 3.432 eV, which is slightly blue shifted compared to the bulk GaN. The Raman E-2 (high) peak position observed at 569.1 cm(-1), which indicates that film is compressively strained. Schottky barrier height (phi(b)) and the ideality factor (eta) for the Au/semipolar GaN Schottky diode found to be 0.55 eV and 2.11, respectively obtained from the TE model.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to WILEY-VCH Verlag GmbH.
Keywords: Semipolar GaN; Epitaxy; MBE
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Depositing User: Francis Jayakanth
Date Deposited: 28 May 2013 11:21
Last Modified: 28 May 2013 11:22
URI: http://eprints.iisc.ac.in/id/eprint/46590

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