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Thermoelectric properties of chalcogenide based Cu2+xZnSn1-xSe4

Raju, Ch and Falmbigl, M and Rogl, P and Yan, X and Bauer, E and Horky, J and Zehetbauer, M and Mallik, Ramesh Chandra (2013) Thermoelectric properties of chalcogenide based Cu2+xZnSn1-xSe4. In: AIP ADVANCES, 3 (3).

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Official URL: http://dx.doi.org/10.1063/1.4794733


Quaternary chalcogenide compounds Cu2+ xZnSn1-xSe4 (0 <= x <= 0.15) were prepared by solid state synthesis. Rietveld powder X-ray diffraction (XRD) refinements combined with Electron Probe Micro Analyses (EPMA, WDS-Wavelength Dispersive Spectroscopy) and Raman spectra of all samples confirmed the stannite structure (Cu2FeSnS4-type) as the main phase. In addition to the main phase, small amounts of secondary phases like ZnSe, CuSe and SnSe were observed. Transport properties of all samples were measured as a function of temperature in the range from 300 K to 720 K. The electrical resistivity of all samples decreases with an increase in Cu content except for Cu2.1ZnSn0.9Se4, most likely due to a higher content of the ZnSe. All samples showed positive Seebeck coefficients indicating that holes are the majority charge carriers. The thermal conductivity of doped samples was high compared to Cu2ZnSnSe4 and this may be due to the larger electronic contribution and the presence of the ZnSe phase in the doped samples. The maximum zT = 0.3 at 720 K occurs for Cu2.05ZnSn0.95Se4 for which a high-pressure torsion treatment resulted in an enhancement of zT by 30% at 625 K. Copyright 2013 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. http://dx.doi.org/10.1063/1.4794733]

Item Type: Journal Article
Additional Information: Copyright for this article belongs to the AMER INST PHYSICS, USA.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Francis Jayakanth
Date Deposited: 14 May 2013 07:43
Last Modified: 14 May 2013 07:43
URI: http://eprints.iisc.ac.in/id/eprint/46497

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