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Relation between the work function and Young's modulus of RhSi and estimate of Schottky-barrier height at RhSi/Si interface: An ab-initio study

Niranjan, Manish K and Waghmare, Umesh V (2012) Relation between the work function and Young's modulus of RhSi and estimate of Schottky-barrier height at RhSi/Si interface: An ab-initio study. In: JOURNAL OF APPLIED PHYSICS, 112 (9).

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Official URL: http://dx.doi.org/10.1063/1.4761994

Abstract

Density-functional calculations are performed to explore the relationship between the work function and Young's modulus of RhSi, and to estimate the p-Schottky-barrier height (SBH) at the Si/RhSi(010) interface. It is shown that the Young's modulus and the workfunction of RhSi satisfy the generic sextic relation, proposed recently for elemental metals. The calculated p-SBH at the Si/RhSi interface is found to differ only by 0.04 eV in opposite limits, viz., no-pinning and strong pinning. We find that the p-SBH is reduced as much as by 0.28 eV due to vacancies at the interface. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4761994]

Item Type: Journal Article
Additional Information: Copyright for this article belongs to AMER INST PHYSICS, MELVILLE, USA
Department/Centre: Division of Physical & Mathematical Sciences > Centre for Theoretical Studies (Ceased to exist at the end of 2003)
Depositing User: Francis Jayakanth
Date Deposited: 04 Jan 2013 11:58
Last Modified: 04 Jan 2013 11:58
URI: http://eprints.iisc.ac.in/id/eprint/45626

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