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Fabrication of Highly Dense Nanoholes by Self-Assembled Gallium Droplet on Silicon Surface

Sugavaneshwar, Ramu Pasupathi and Nagao, Tadaaki and Nanda, Karuna Kar (2012) Fabrication of Highly Dense Nanoholes by Self-Assembled Gallium Droplet on Silicon Surface. In: MATERIALS EXPRESS, 2 (3). pp. 245-250.

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Official URL: http://dx.doi.org/10.1166/mex.2012.1070

Abstract

We report the fabrication of nanoholes on silicon surface by exploiting the solubility of silicon in gallium by local droplet etching. Nanometer-sized gallium droplets yield nanoholes when annealed in ultra-high vacuum at moderate temperatures (similar to 500 degrees C) without affecting the other regions. High vacuum and moderate annealing temperatures are key parameters to obtain well-defined nanoholes with diameter comparable to that of Ga droplets. Self-assembly of Ga droplet leads to a nanohole density of 4-8 x 10(10)/cm(2).

Item Type: Journal Article
Additional Information: Copyright for this article belongs to AMER SCIENTIFIC PUBLISHERS,USA
Keywords: Nanohole Fabrication;Self-Assembly of Ga Droplets;Si Etching
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Depositing User: Francis Jayakanth
Date Deposited: 31 Dec 2012 07:20
Last Modified: 31 Dec 2012 07:20
URI: http://eprints.iisc.ac.in/id/eprint/45602

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