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Magneto-Transport Study of Pure and Co Doped ZnO Thin Films

Ghoshal, Sayak and Kumar, Anil PS (2012) Magneto-Transport Study of Pure and Co Doped ZnO Thin Films. In: IEEE TRANSACTIONS ON MAGNETICS, 48 (11). pp. 3426-3429.

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Official URL: http://dx.doi.org/10.1109/TMAG.2012.2196031

Abstract

A detailed low temperature magneto-transport study is carried out to understand the transport mechanism in pure and Co doped ZnO thin films grown by pulsed laser deposition (PLD) technique. A negative transverse magneto-resistance (MR) (with a value similar to 4% at 4.5 K) which decreases monotonically with the increase in temperature, is observed for the undoped ZnO film. A competition between positive and negative MR is observed for the Co doped ZnO samples. In this case at higher field values negative MR contribution dominates over the positive MR, which gives rise to a slope change in the MR data. Our data for MR shows excellent agreement with the semi-empirical formula given by Khosla et al., which is originally proposed for the degenerate semiconductors. This formula incorporates the third order perturbation expansion of the s-d exchange scattering of the conduction electrons from the localised spins. We have also obtained the Hall mobility, carrier conc. and mean free path as function of temperature for the pure ZnO film.

Item Type: Journal Article
Additional Information: Copyright for this article belongs to IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, USA
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Francis Jayakanth
Date Deposited: 31 Dec 2012 05:43
Last Modified: 31 Dec 2012 05:43
URI: http://eprints.iisc.ac.in/id/eprint/45475

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