ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Signatures of Ge2Sb2Te5 film at structural transitions

Vinod, EM and Naik, Ramakanta and Ganesan, R and Sangunni, KS (2012) Signatures of Ge2Sb2Te5 film at structural transitions. In: Journal of Non-Crystalline Solids, 358 (21). pp. 2927-2930.

[img] PDF
jl_non_cry_sol_358_2927_2012.pdf - Published Version
Restricted to Registered users only

Download (669kB) | Request a copy
Official URL: http://dx.doi.org/10.1016/j.jnoncrysol.2012.07.021

Abstract

Ge2Sb2Te5 (GST) films, one of the most suitable Chalcogenide alloys for Phase change Random Access Memory applications are studied for changes in sheet resistance, optical transmission, morphology and surface science by annealing at various transition temperatures. The crystallization leads to an increase of grain size and roughness in the films and the resistance changes to three orders of magnitude. Optical studies on GST films show distinct changes during phase transitions and the optical parameters are calculated. An increase of Tauc parameters B-1/2 indicates a reduction in disorder during phase transition. It is confirmed from XPS studies that Ge-Te, Sb-Te bonds are present in both amorphous and crystalline phases whereas Sb-Ge, Te-Te, Sb-Sb bonds are absent. (C) 2012 Elsevier B.V. All rights reserved.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: GST; Phase Change Materials; XRD; XPS; Optical Band Gap
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Id for Latest eprints
Date Deposited: 19 Feb 2013 05:41
Last Modified: 19 Feb 2013 05:41
URI: http://eprints.iisc.ac.in/id/eprint/45378

Actions (login required)

View Item View Item