High field carrier transport in graphene: Insights from fast current transient

Majumdar, Kausik and Kallatt, Sangeeth and Bhat, Navakanta (2012) High field carrier transport in graphene: Insights from fast current transient. In: APPLIED PHYSICS LETTERS, 101 (12).

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Abstract

In this work, we observe gate tunable negative differential conductance (NDC) and current saturation in single layer and bilayer graphene transistor at high source-drain field, which arise due to the interplay among (1) self-heating, (2) hot carrier injection, and (3) drain induced minority carrier injection. The magnitude of the NDC is found to be reduced for a bilayer, in agreement with its weaker carrier-optical phonon coupling and less efficient hot carrier injection. The contributions of different mechanisms to the observed results are decoupled through fast transient measurements with nanosecond resolution. The findings provide insights into high field transport in graphene. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4754103]

Item Type:	Journal Article
Publication:	APPLIED PHYSICS LETTERS
Publisher:	AMER INST PHYSICS
Additional Information:	Copyright for this article belongs to AMER INST PHYSICS, MELVILLE, USA
Department/Centre:	Division of Electrical Sciences > Electrical Communication Engineering Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	22 Nov 2012 10:26
Last Modified:	22 Nov 2012 10:26
URI:	http://eprints.iisc.ac.in/id/eprint/45320

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