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Analytical Field-Effect Method for Extraction of Subgap States in Thin-Film Transistors

Lee, Sungsik and Ahnood, Arman and Sambandan, Sanjiv and Madan, Arun and Nathan, Arokia (2012) Analytical Field-Effect Method for Extraction of Subgap States in Thin-Film Transistors. In: IEEE ELECTRON DEVICE LETTERS, 33 (7). pp. 1006-1008.

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Official URL: http://dx.doi.org/10.1109/LED.2012.2193657


We present an analytical field-effect method to extract the density of subgap states (subgap DOS) in amorphous semiconductor thin-film transistors (TFTs), using a closed-form relationship between surface potential and gate voltage. By accounting the interface states in the subthreshold characteristics, the subgap DOS is retrieved, leading to a reasonably accurate description of field-effect mobility and its gate voltage dependence. The method proposed here is very useful not only in extracting device performance but also in physically based compact TFT modeling for circuit simulation.

Item Type: Journal Article
Additional Information: Copyright for this article belongs to the IEEE
Keywords: Amorphous semiconductor thin-film transistors (TFTs); density of subgap states (subgap DOS); field-effect mobility
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Depositing User: Francis Jayakanth
Date Deposited: 02 Aug 2012 05:35
Last Modified: 02 Aug 2012 05:35
URI: http://eprints.iisc.ac.in/id/eprint/44889

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