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Synthesis of one-dimensional N-doped Ga2O3 nanostructures: different morphologies and different mechanisms

Vanithakumari, SC and Nanda, KK (2011) Synthesis of one-dimensional N-doped Ga2O3 nanostructures: different morphologies and different mechanisms. In: BULLETIN OF MATERIALS SCIENCE, 34 (7). pp. 1331-1338.

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Official URL: http://www.ias.ac.in/matersci/bmsdec2011/1331.pdf

Abstract

N-doped monoclinic Ga2O3 nanostructures of different morphologies have been synthesized by heating Ga metal in ambient air at 1150 degrees C to 1350 degrees C for 1 to 5 h duration. Neither catalyst nor any gas flow has been used for the synthesis of N-doped Ga2O3 nanostructures. The morphology was controlled by monitoring the curvature of the Ga droplet. Plausible growth mechanisms are discussed to explain the different morphology of the nanostructures. Elemental mapping by electron energy loss spectroscopy of the nanostructures indicate uniform distribution of Ga, O and N. It is interesting to note that we have used neither nitride source nor any gas flow but the synthesis was carried out in ambient air. We believe that ambient nitrogen acts as the source of nitrogen. Unintentional nitrogen doping of the Ga2O3 nanostructures is a straightforward method and such nanostructures could be promising candidates for white light emission.

Item Type: Journal Article
Additional Information: Copyright for this article belongs to Indian Academy of Sciences.
Keywords: Ga2O3 nanostructures;nitrogen doping;white light emission; growth mechanism
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Depositing User: Francis Jayakanth
Date Deposited: 21 Jun 2012 05:05
Last Modified: 21 Jun 2012 05:05
URI: http://eprints.iisc.ac.in/id/eprint/44721

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