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Optical properties change in Sb40S40Se20 thin films by light-induced effect

Naik, Ramakanta and Parida, Sanjit K and Kumar, C and Ganesan, R and Sangunni, KS (2012) Optical properties change in Sb40S40Se20 thin films by light-induced effect. In: Journal of Alloys and Compounds, 522 . pp. 172-177.

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Official URL: http://dx.doi.org/10.1016/j.jallcom.2012.01.144


Thin films of Sb40Se20S40 with thickness 1000 nm were prepared by thermal evaporation technique. The amorphous nature of the thin films was verified by X-ray diffractometer. The chemical composition of the deposited thin films was examined by energy dispersive X-ray analysis (EDAX). The changes in optical properties due to the influence of laser radiation on amorphous thin films of Sb40Se20S40 glassy alloy were calculated from absorbance spectra as a function of photon energy in the wavelength region 450-900 nm. Analysis of the optical absorption data shows that the rule of non-direct transitions predominates. It has been observed that laser-irradiation of the films leads to a decrease in optical band gap while increase in absorption coefficient. The decrease in the optical band gap is explained on the basis of change in nature of films due to disorderness. The optical changes are supported by X-ray photoelectron spectroscopy and Raman spectroscopy. (C) 2012 Elsevier B.V. All rights reserved.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: Chalcogenides;Thin films;Optical properties;FTIR;XPS
Department/Centre: Division of Electrical Sciences > Computer Science & Automation
Depositing User: Id for Latest eprints
Date Deposited: 20 Apr 2012 12:40
Last Modified: 12 Nov 2018 15:44
URI: http://eprints.iisc.ac.in/id/eprint/44152

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