Structural and electrical properties of low pressure metalorganic chemical vapor deposition grown Eu2O3 films on Si(100)

Singh, MP and Shalini, K and Shivashankar, SA and Deepak, GC and Bhat, N (2006) Structural and electrical properties of low pressure metalorganic chemical vapor deposition grown Eu2O3 films on Si(100). In: Applied Physics Letters, 89 (20). 201901 -201901.

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Abstract

Structural and electrical properties of Eu2O3 films grown on Si(100) in 500–600 °C temperature range by low pressure metalorganic chemical vapor deposition are reported. As-grown films also possess the impurity Eu1−xO phase, which has been removed upon annealing in O2 ambient. Film’s morphology comprises uniform spherical mounds (40–60 nm). Electrical properties of the films, as examined by capacitance-voltage measurements, exhibit fixed oxide charges in the range of −1.5×1011 to −6.0×1010 cm−2 and dielectric constant in the range of 8–23. Annealing has resulted in drastic improvement of their electrical properties. Effect of oxygen nonstoichiometry on the film’s property is briefly discussed.

Item Type:	Journal Article
Publication:	Applied Physics Letters
Publisher:	American Institute of Physics
Additional Information:	Copyright of this article belongs to American Institute of Physics.
Department/Centre:	Division of Chemical Sciences > Materials Research Centre Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited:	27 Feb 2012 11:07
Last Modified:	27 Feb 2012 11:07
URI:	http://eprints.iisc.ac.in/id/eprint/43023

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