Effect of gate-drain/source overlap on the noise in 90 nm N-channel metal oxide semiconductor field effect transistors

Srinivasan, R and Bhat, Navakanta (2006) Effect of gate-drain/source overlap on the noise in 90 nm N-channel metal oxide semiconductor field effect transistors. In: Journal of Applied Physics, 99 (8). 084505-084505.

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Abstract

In this paper, we have studied the effect of gate-drain/source overlap (LOV) on the drain channel noise and induced gate current noise (SIg) in 90 nm N-channel metal oxide semiconductor field effect transistors using process and device simulations. As the change in overlap affects the gate tunneling leakage current, its effect on shot noise component of SIg has been taken into consideration. It has been shown that “control over LOV” allows us to get better noise performance from the device, i.e., it allows us to reduce noise figure, for a given leakage current constraint. LOV in the range of 0–10 nm is recommended for the 90 nm gate length transistors, in order to get the best performance in radio frequency applications.

Item Type:	Journal Article
Publication:	Journal of Applied Physics
Publisher:	American Institute of Physics
Additional Information:	Copyright of this article belongs to American Institute of Physics.
Department/Centre:	Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited:	27 Feb 2012 11:18
Last Modified:	27 Feb 2012 11:18
URI:	http://eprints.iisc.ac.in/id/eprint/42992

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