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UV Photodetectors Based on ZnO Nanorods: Role of Defect-Concentration

Chitara, Basant and Panchakarla, Leela Srinivas and Krupanidhi, Salaru Baba and Rao, CNR (2011) UV Photodetectors Based on ZnO Nanorods: Role of Defect-Concentration. In: Japanese Journal of Applied Physics, 50 (10, Pa).

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Official URL: http://jjap.jsap.jp/link?JJAP/50/100206/

Abstract

UV photodetectors based on ZnO nanorods prepared by two methods have been fabricated by a simple drop casting procedure. The detectors show good performance at 375 nm giving satisfactory values of responsivity, external quantum efficiency and photoconductive gain. The performance of ZnO nanorods prepared at low temperatures, containing a larger concentration of defects, is found to be superior. (C) 2011 The Japan Society of Applied Physics

Item Type: Journal Article
Publication: Japanese Journal of Applied Physics
Publisher: Institute of Pure and Applied Physics
Additional Information: Copyright of this article belongs to Institute of Pure and Applied Physics.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 07 Dec 2011 07:03
Last Modified: 07 Dec 2011 07:03
URI: http://eprints.iisc.ac.in/id/eprint/42539

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