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Gibbs free energies of formation of indium (III) oxide and sulphate

Jacob, KT (1978) Gibbs free energies of formation of indium (III) oxide and sulphate. In: Transactions of the Institution of Mining and Metallurgy, 87 . C165-C169.

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Emf measurements on the galvanic cell Pt, Ta, In + In,O, / Tho,-Y,03 / Cu + C+O, Pt were used to obtain the standard free energy of formation of 1%03fr om 600 to 900°C. Differential thermal analysis was used to detect the decomposition of In2(S0,), under controlled SO2 + O2 + Ar mixtures in thqtemperature range 640-8wC. X-ray diffraction analysis indicated that the decomposition product was 1%03 without an oxywlphate intermediate. The following equations were obtained for the variation of the standard free-energy change(Jlmole) with temperature:

Item Type: Journal Article
Department/Centre: Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Depositing User: Ms V Mangala
Date Deposited: 01 Dec 2011 07:37
Last Modified: 01 Dec 2011 07:37
URI: http://eprints.iisc.ac.in/id/eprint/42501

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